鐢�(ch菐n)鍝佸弮鏁�(sh霉) | |||
---|---|---|---|
鍝佺墝 | 鑻遍鍑� | ||
灏佽 | 鏁存祦姗嬫ā濉� | ||
鎵硅櫉 | 鏂板勾浠� | ||
鏁�(sh霉)閲� | 200 | ||
鍒堕€犲晢 | Infineon | ||
鐢�(ch菐n)鍝佺ó椤� | 鍒嗙珛鍗婂皫楂旀ā濉� | ||
RoHS | 鏄� | ||
Vr - 鍙嶅悜闆诲 | 1600 V | ||
瀹夎棰ㄦ牸 | Through Hole | ||
灏佽 / 绠遍珨 | TDB6 | ||
鏈€灏忓伐浣滄韩搴� | - 40 C | ||
鏈€澶у伐浣滄韩搴� | 125 C | ||
绯诲垪 | TTB6C | ||
閰嶇疆 | Bridge | ||
1-Phase | |||
杓稿嚭闆绘祦 | 75 A | ||
鏌垫サ瑙哥櫦(f膩)闆绘祦-Igt | 150 mA | ||
淇濇寔闆绘祦Ih鏈€澶у€� | 200 mA | ||
鍏稿瀷寤堕伈鏅傞枔 | 1.2 us | ||
鍙敭璩e湴 | 鍏ㄥ湅 | ||
鍨嬭櫉 | TDB6HK95N16LOF |